Professor Hong Jin Pyo is a Distinguished Professor at Hanyang University, affiliated with both the Physics and Nano Semiconductor Engineering Departments. He is also working as a dean of Natural Science at Hanyang University. He completed his education at the University of California, Los Angeles (UCLA), earning his Ph.D. in Physics in 1992 after obtaining his Bachelor's degree in 1987.
Professor Hong Jin Pyo focuses on cutting-edge areas in physics and engineering, such as spintronics, advanced memory systems, semiconductor technology, and new ways to harvest and store energy. His research includes studying how spin-based technologies can improve artificial intelligence devices, like creating materials that act like brain cells. He's also working on making memory storages, such as SOT/STT-MRAM & ReRAM-based AI, novel SOM (selector-only-memory), oxide semiconductor-based capless 2T-0C frame and defect analyses, more efficient and reliable, exploring how different materials can switch on and off to store data. He's also interested in how to generate power from sources like movement or light, especially using 1D/2D hybrid materials that can be woven into fabrics. This could lead to clothes or materials that can charge devices or monitor health. To support his work, Professor Hong uses special tools and techniques to closely examine how materials work at a very small scale, helping to invent new technologies and improve existing ones.
This seminar analyzes the dominance of South Korea in the global DRAM market, attributing it to relentless technological innovation and systematic development of semiconductor experts domestically. With the advent of the Memory-centric computing era and the AI semiconductor era, the demand for high-performance DRAM, such as HBM, is expected to surge. In this context, DRAM technology will continue to play a pivotal role in the computing environment of the future.
DRAM's main advantages include high density and low manufacturing costs, which enable efficient processing of large data volumes. Furthermore, its fast access speed and dynamic data refresh capabilities make it an essential memory solution for high-performance computing systems.
The seminar will provide a detailed explanation of the basic structure of the DRAM, the 1T-1C cell, and its operating principles. We will also introduce real DRAM device images and the process integration workflow. Additionally, we will discuss the potential of next-generation memory technologies, such as Selector-only Memory (SOM), 3D DRAM, capless 2T-OC, and SOT-MRAM, which could replace DRAM. Each technology's fundamental operating principles and structures will be examined in depth.