Educational background
1999 B. D. in Physics, Yonsei University, Seoul, Korea
2001 M. D. in Physics, Yonsei University, Seoul, Korea
2005 Ph.D. in Physics, Yonsei University, Seoul, Korea
Work experience
2005 – 2006 Post-doc., Department of Electrical Engineering, University of South Florida, USA (c/o Prof. R. Schlaf)
2006 – 2011 Senior Researcher, Korea Research Institute of Standards and Science, Korea
2011 – present Professor, Department of Physics, Yonsei University
2024 – 2025 Visiting Professor, LG Display Co., Korea
Present research activity
- Advanced Photoelectron Spectroscopy: Utilizing both direct and inverse photoelectron spectroscopy to characterize the electronic structure of semiconductors and low-dimensional hybrid materials.
- New Materials Exploration: Actively exploring and developing novel materials with tailored electronic properties for next-generation applications.
Understanding the electronic structure of materials is crucial for the rational design and operation of modern electronic devices, particularly semiconductors. The performance of these devices is fundamentally governed by the arrangement and behavior of electrons. This tutorial will provide a comprehensive overview of photoelectron spectroscopy (PES) as a powerful technique for probing and analyzing these electronic properties. We will first explain the basic principles of PES, including the photoelectric effect, and how it can be used to directly measure electron binding energies. The presentation will then explore how PES can be used to understand the electronic structures of various materials, focusing on key concepts such as energy levels, bandgaps, and quasiparticle behaviors of electrons. We will discuss practical applications of PES, including the measurement and interpretation of energy band diagrams and the determination of energy level alignments at interfaces, which are critical for device performance. The goal of this session is to provide attendees with the fundamental knowledge necessary to use PES for advanced material characterization and device physics rationalization.